CAPACITOR OF FERROELECTRIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A capacitor of a ferroelectric memory device and a method for manufacturing the same are provided to be capable of improving reliability by forming a Bi4Ti3O12(BIT) film between a BLT dielectric film and a lower electrode. CONSTITUTION: A lower electrode is formed on a semiconductor substrate. A BIT thin film is formed on the lower electrode. A BLT dielectric film is formed on the BIT thin film. An upper electrode is formed on the BLT dielectric film. At the time, the composition of the BIT thin film is Bi : Ti : O = 4 : 3 : 12. Also, the thickness of the BIT thin film is 200-500Å.