| 发明名称 |
Method for fabricating a III nitride film |
| 摘要 |
<p>An acicular structure is formed of AlN on the main surface of a base made of single crystal. Then, a desired Al-including III nitride film is formed on the main surface of the base via the acicular structure.</p> |
| 申请公布号 |
EP1323851(A2) |
申请公布日期 |
2003.07.02 |
| 申请号 |
EP20020028869 |
申请日期 |
2002.12.23 |
| 申请人 |
NGK INSULATORS, LTD. |
发明人 |
SHIBATA, TOMOHIKO;SUMIYA, SHIGEAKI;TANAKA, MITSUHIRO |
| 分类号 |
C30B29/38;H01L21/02;C23C16/02;C23C16/34;C30B25/02;C30B25/18;C30B29/40;H01L21/20;H01L21/205;H01L33/00;H01L33/12;H01L33/32;(IPC1-7):C30B25/02 |
主分类号 |
C30B29/38 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
