| 摘要 |
<P>PROBLEM TO BE SOLVED: To carry out etching to a first insulating film comprising a silicon nitride film, and a second insulating film comprising a silicon oxide film formed on the first insulating film by using the same plasma etching apparatus for forming a hole. <P>SOLUTION: On a first interlayer dielectric 102, a first insulating film 104 comprising a silicon nitride film, and a second insulating film 105 comprising a silicon oxide film are successively deposited. In the chamber of an inductive coupling type plasma etching apparatus, selective etching is made to the second insulating film 105 by a first etching gas using a fluorocarbon gas having a ring structure as a main constituent, and an upper section 108a of the hole is formed. Then, in the same chamber, the selective etching is carried out to the first insulating film 104 by a second etching gas using an oxygen gas as the main constituent, and a lower section 108b of the hole is formed. <P>COPYRIGHT: (C)2003,JPO |
