发明名称 |
Toughness, adhesion and smooth metal lines of porous low k dielectric interconnect structures |
摘要 |
A structure useful for electrical interconnection comprises a substrate; a plurality of porous dielectric layers disposed on the substrate; an etch stop layer disposed between a first of the dielectric layers and a second of the dielectric layers; and at least one thin, tough, non-porous dielectric layer disposed between at least one of the porous dielectric layers and the etch stop layer. A method for forming the structure comprising forming a multilayer stack of porous dielectric layers on the substrate, the stack including the plurality of porous dielectric layers, and forming a plurality of patterned metal conductors within the multilayer stack. Curing of the multilayer dielectric stack may be in a single cure step in a furnace. The application and hot plate baking of the individual layers of the multi layer dielectric stack may be accomplished in a single spin-coat tool, without being removed, to fully cure the stack until all dielectric layers have been deposited.
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申请公布号 |
US2003114013(A1) |
申请公布日期 |
2003.06.19 |
申请号 |
US20020290682 |
申请日期 |
2002.11.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HEDRICK JEFFREY C.;LEE KANG-WOOK;MALONE KELLY;TYBERG CHRISTY S. |
分类号 |
H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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