发明名称 |
Semiconductor device having a metal gate with a work function compatible with a semiconductor device |
摘要 |
The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a first gate electrode that includes a first metal gate electrode material having a work function compatible with the first transistor, and a second gate electrode that includes a second metal gate electrode material having a work function compatible with the second transistor and the first metal gate electrode material is also located over the second metal gate electrode material, which forms a gate stack.
|
申请公布号 |
US6579775(B2) |
申请公布日期 |
2003.06.17 |
申请号 |
US20010003871 |
申请日期 |
2001.10.24 |
申请人 |
AGERE SYSTEMS INC. |
发明人 |
KIZILYALLI ISIK C.;SINGH RANBIR;STIRLING LORI |
分类号 |
H01L27/092;H01L21/28;H01L21/8238;H01L29/49;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/092 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|