发明名称 |
Moisture corrosion inhibitor layer for Al-alloy metallization layers, particularly for electronic devices and corresponding manufacturing method |
摘要 |
A method of producing a protective inhibitor layer of moisture-generated corrosion for aluminum (Al) alloy metallization layers, particularly in semiconductor electronic devices, includes chemically treating the metallization layer in at least two steps using a mixture of concentrated nitric acid and trace phosphoric acid to produce a thin protective phosphate layer. Alternatively, the method may include dipping the electronic device at least once in a mixture of a polar organic solvent and phosphoric acid (H3PO4) or phosphate derivatives thereof in a low percentage amount (e.g., with a phosphate reactant such as orthophosphoric acid or even R-HxPOy, where R is an alkaline type of ion group or an alkyl radical). The thin film may be formed on top of a thin layer of native aluminum oxide hydrate Al2O3.xH2O.
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申请公布号 |
US2003107109(A1) |
申请公布日期 |
2003.06.12 |
申请号 |
US20030345706 |
申请日期 |
2003.01.16 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
CURRO GIUSEPPE;SCANDURRA ANTONIO |
分类号 |
B32B9/00;C23C22/03;C23C22/08;C23C22/10;C23C22/82;C23C30/00;C23G1/24;C23G5/032;H01L21/321;H01L21/3213;H01L21/768;H01L23/522;(IPC1-7):H01L23/58 |
主分类号 |
B32B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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