发明名称 CMP ABRASIVE AND MANUFACTURING METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To provide an abrasive of a CMP technique for planarizing an interlayer insulating film and an insulating film for shallow-trench separation, which enables efficient and high-speed polishing, and to provide a manufacturing method therefor. SOLUTION: The CMP abrasive comprises ceric oxide particles, water-soluble polymer and water. After production of the CMP abrasion, secondary particles of the ceric oxide particles are allowed for at least four hours to keep their size 70 to 150% that obtained at the time of production.</p>
申请公布号 JP2003158101(A) 申请公布日期 2003.05.30
申请号 JP20010354818 申请日期 2001.11.20
申请人 HITACHI CHEM CO LTD 发明人 HAGA KOJI;HIRAI KEIZO;MAMIYA TSUTOMU;AIZU KAZUO
分类号 B24B37/00;C09K3/14;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B37/00
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