| 摘要 |
PURPOSE: An apparatus for growing single crystalline silicon ingot is provided to measure accurate temperature of silicon melt by using a temperature measuring means installed adjacently to the surface of the silicon melt. CONSTITUTION: The apparatus for growing single crystalline silicon ingot comprises a chamber(100); a quartz crucible(104) installed in the chamber so that the quartz crucible contains silicon melt(102); a crucible support(108) fixed onto a driving unit(106) for rotating the quartz crucible; a cylindrical heater(110) for encircling the crucible support; a cylindrical cooling water pipe(114) installed on a path through which an ingot grown from the silicon melt passes so that the silicon ingot(126) is cooled by the cooling water pipe; and a temperature detection means(120) formed inside the cooling water pipe to detect temperature of the silicon melt, wherein the temperature detection means comprises window(116), optical fiber(118), temperature detector(122), and controller(124), wherein the window is sealed with being screw connected to the cooling water pipe.
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