| 摘要 |
PROBLEM TO BE SOLVED: To propose a system that inexpensively adapts contradictory performance of high speed operation and high throughput, and, in addition, to propose a system that performs an alignment method corresponding to a process error simultaneously with an increased speed in focus offsetting, and impurity inspection at the periphery section of a wafer. SOLUTION: In the alignment method, a wafer is vacuum-chucked by a chuck outside an projection aligner, a mark is arranged on the chuck, the relative relationship of the direction axis of each shot of the wafer to the mark on the chuck is measured, conveyance to the projection aligner is performed for each chuck, and merely the mark on the chuck is measured for exposing in the projection aligner. In alignment measurement, shape measurement is conducted in the presence or absence of a resist, and an alignment error can also be calculated by signal simulation. A focus offset is also measured outside the projection aligner, the information of the measurement is reflected to the projection aligner, and exposure is performed, thus achieving a system having high accuracy and throughput. Impurity inspection is also carried out. |
