| 摘要 |
<p>According to the present invention, a gas supply line of the CVD apparatus includes a regulator, a valve and an accumulator, thereby effectively controlling gas flowing into a chamber. Also, an opened portion of a heat element disposed on a heater is configured in the form of slant line, deeply bent line or gently curved line, and a wafer seating part is formed in the shape of wafer, thereby improving the thickness uniformity of the thin film. A metallic material is interposed thereby easily controlling the temperature of the heater. A vertically movable ceramic ring is mounted on a shower head, thereby preventing a thin film from being formed on a lateral or rear surface of the wafer. Besides, the chamber is set to perform a follow-up process after a remote plasma cleaning process by being clicked once, thereby reducing non-uniformity in thickness of each wafer and minimizing the generation of particles.</p> |
