Capacitor and semiconductor memory

摘要

In order to reduce a leakage current of a storage node (120), a rough semiconductor film (108) provided in the storage node (120) includes a portion (108a) forming a side face of the storage node (120) and a portion (108b) forming a bottom of the storage node (120). Each of particles contributing to the roughness of the portion (108b) forming the bottom of the storage node (120) has a diameter smaller than a diameter of each of particles contributing to the roughness of the portion (108a) forming the side face of the storage node (120).