MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light emitting element which can prevent generation of cracks in an interface between an Si substrate and a nitride semiconductor, and to provide the semiconductor light emitting element. SOLUTION: The manufacturing method of a semiconductor light emitting element comprises a process for providing a mask layer with a plurality of opening parts on a silicon substrate, and a process for forming a columnar multilayer structure body with a light emitting layer of a nitride semiconductor material. The mask layer between the opening parts is at most 10 μm thick.