发明名称 IMPROVED CHIP CRACK STOP DESIGN FOR SEMICONDUCTOR CHIPS
摘要 A semiconductor chip, in accordance with the present invention, includes a substrate and a crack stop structure. The crack structure includes a first conductive line disposed over the substrate and at least two first contacts connected to the substrate and to the first conductive line. The at least two first contacts are spaced apart from each other and extend longitudinally along a length of the first conductive line. A second conductive line is disposed over a portion of the first conductive line, and at least two second contacts are connected to the first conductive line and the second conductive line. The at least two second contacts are spaced apart from each other and extend longitudinally along a length of the second conductive line.
申请公布号 KR20030038728(A) 申请公布日期 2003.05.16
申请号 KR20037003218 申请日期 2003.03.04
申请人 发明人
分类号 H01L21/78;H01L23/00;H01L23/58 主分类号 H01L21/78
代理机构 代理人
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