| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having a structure in which the flow of a creep (surface) leakage current or a bulk uppermost surface current is suppressed. SOLUTION: The semiconductor light emitting element comprises a first compound semiconductor layer 12A, a second compound semiconductor layer 14, a contact layer 12B extended from the first layer 12A, a first electrode 20 formed on the layer 12B, and a second electrode 21 formed on the second layer 14 in such a manner that a recess 31 is provided on the surface region between the first layer 12A and the second layer 12B. |
