发明名称 Power switching semiconductor device with suppressed oscillation
摘要 A wiring pattern (26) or (27) and conductor wires (W1, W2) or (W3, W4) not relaying a wiring pattern (22) or (23) fed with an emitter current connect emitter electrodes of a plurality of IGBTs (3) connected in parallel with each other. Thus, oscillation appearing on the potential of a control electrode of the plurality of IGBTs (3) is suppressed.
申请公布号 US6552429(B2) 申请公布日期 2003.04.22
申请号 US20010939746 申请日期 2001.08.28
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ARAI KIYOSHI;HONDA NOBUHISA;MATSUMOTO HIDEO
分类号 H01L25/07;(IPC1-7):H01L23/34 主分类号 H01L25/07
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