| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor luminous element that is easy to fabricate by a semiconductor process and displays satisfactory performance due to excellent crystallinity. SOLUTION: This is a semiconductor luminous element provided with a crystal layer that is selectively grown at an annular opening part formed in a mask layer and has S-planes or the planes that are substantially equivalent to the S-planes tilted to the mask-layer formed plane. In the plane parallel to the S-plane or the plane that is substantially equivalent to the S-plane, the first conductive type layer, an active layer and the second conductive type layer are formed. The crystal layer has an annular top part along the annular opening part, for example, with both sides that are the S-planes or the planes that are substantially equivalent to the S-planes tilted to the mask-formed plane, or the crystal is grown in such a form as to bury the zone surrounded by the annular opening part to have a polygonal cone shape. |
