发明名称 |
Stacked film insulating film and substrate for semiconductor |
摘要 |
<p>A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60 % by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.</p> |
申请公布号 |
EP1298176(A2) |
申请公布日期 |
2003.04.02 |
申请号 |
EP20020021449 |
申请日期 |
2002.09.25 |
申请人 |
JSR CORPORATION |
发明人 |
NISHIKAWA, MICHINORI;SEKIGUCHI, MANABU;PATZ, MATTHIAS;SHIOTA, ATSUSHI;YAMADA, KINJI |
分类号 |
H01L21/31;B05D3/02;B32B9/04;C08G65/40;C09D165/00;C09D171/00;C09D183/04;C09D183/14;H01L21/312;(IPC1-7):C09D183/04 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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