| 摘要 |
<p>A one-time programmable memory cell (100, 300) including a fuse (130, 330) and an anti-fuse (180, 380) in series, has two states, an initial state and a written (programmed) state. In the initial state, a resistance of the cell is finite, typically dominated by the relatively high resistance of the anti-fuse. In the written state, the resistance is infinite because the breakdown of the fuse resulting in an open circuit. The cell (100, 300) may be programmed by applying a critical voltage across the cell (100, 300) generating a critical current to cause the fuse (130, 330) to become open. When critical voltage is applied, this generally causes the anti-fuse (180, 380) to break down, which in turn causes a pulse of high current to be applied to the fuse. The states are detected by applying a read voltage across the memory cell. If the memory has not been programmed, then a measurable amount flows. Otherwise, no current flows.</p> |
