| 摘要 |
In the method for fabricating an element isolating film of a semiconductor device, a trench is formed in the semiconductor substrate, and a side wall spacer is formed at a side wall of the trench. A silicon layer is formed on a bottom surface of the trench, and a groove portion is formed in the bottom surface of the trench by removing the side wall spacer. An element isolating film is then formed by filling an oxide film in the trench.
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