| 摘要 |
The invention provides a semiconductor storage device whose memory cell section can be tested in a short time. A read data/comparison data select circuit outputs first bit data before written into a memory section or third bit data read out from the memory cell section. The second bit data from the read data/comparison data select circuit or the first bit data from a serial to parallel conversion circuit are compared with the third bit data read out from the memory cell section by a comparison circuit. The comparison circuit outputs the "H" level when the third bit data and the second bit data or the first bit data coincide with each other, but outputs the "L" level in any other case. Since the semiconductor storage device utilizes the two data for comparison including the first bit data and the second bit data, the number of times of setting of data for comparison can be reduced and the time required for a test of the semiconductor storage device can be reduced.
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