发明名称 CHEMICAL MECHANICAL POLISHING TOOL, APPARATUS AND METHOD
摘要 <p>A chemical mechanical polishing tool, apparatus and method. The polishing tool includes a central polishing assembly (322) comprised of a central pad mount (326) on a central shaft. That central pad mount beneficially retains a center polishing pad (324). Also included is a ring polishing assembly (308) comprised of a ring pad mount (332) with a central aperture on a ring shaft with a central aperture. The ring pad mount (322) beneficially retains a ring polishing pad having a central aperture. The central polishing assembly (322) and the ring polishing assembly (308) beneficially rotate and move axially independently of one another. The apparatus includes the CMP polishing tool and a rotating polishing table (311). The method includes rotating a semiconductor wafer (304) on the rotating polishing table (311). Then, selectively and independently moving a solid center polishing pad having an axis of rotation and/or an axially aligned ring-shaped polishing pad into contact with the surface of the semiconductor wafer.</p>
申请公布号 WO2003022518(A2) 申请公布日期 2003.03.20
申请号 US2002027550 申请日期 2002.08.30
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