| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing for a field emission type electron source with low cost, high electron emission efficiency, and high reliability. SOLUTION: A polycrystal silicone layer 3 which is a layered semiconductor made of polycrystal silicon is formed on a conductive layer 12 constituting a part of a conductive substrate, and the polycrystal silicon layer 3 is annealed in inert gas. The annealed polycrystal silicon layer 3' constitutes the polycrystal semiconductor layer, a part of the polycrystal layer 3' is made porous by anodic oxidation to form the polycrystal silicon layer 4. After that, the porous polycrystal silicon layer 4 is electrochemically oxidized to form a strong field drift layer 6. Then, a surface electrode 7 is formed on the strong field drift layer 6.</p> |
