| 发明名称 |
Process for depositing layers on a semiconductor wafer |
| 摘要 |
Processes which use the same precursor material for forming a metal electrode deposition as for forming a dielectric layer deposition. The layers may be successively formed in the same chamber, or may be formed in like chambers located in a processing system.
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| 申请公布号 |
US6534360(B2) |
申请公布日期 |
2003.03.18 |
| 申请号 |
US20010826711 |
申请日期 |
2001.04.04 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NARWANKAR PRAVIN;ZHAO JUN |
| 分类号 |
H01L21/02;H01L21/316;H01L21/768;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
| 代理机构 |
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