发明名称 SOI WAFER LASER MARK PRINTING METHOD AND SOI WAFER
摘要 <p>PROBLEM TO BE SOLVED: To provide an SOI wafer laser mark printing method which is capable of printing a laser mark which can be accurately read by an optical character reader on an SOI wafer and the SOI wafer. SOLUTION: A laser mark is printed on either the surface of a SOI layer or a terrace of the surface of a base wafer after an SOI wafer is finished (1), or a part covering a laser mark printed area on a base wafer out of a bond wafer is removed, and an opening which uncovers the laser mark printed area is formed (2), or a laser mark is previously printed on a region of the surface of the base wafer which does not overlap with the bond wafer before a base wafer and a bond wafer are bonded together (3), or a part of a bond wafer overlapping with a laser mark printed area is removed before a base wafer where a laser mark is previously printed and a bond wafer are bonded together (4).</p>
申请公布号 JP2003078115(A) 申请公布日期 2003.03.14
申请号 JP20010262236 申请日期 2001.08.30
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 TOMIZAWA SHINICHI;TANAKA KOICHI
分类号 H01L27/12;H01L21/02;H01L21/762;H01L23/00;H01L23/544;(IPC1-7):H01L27/12 主分类号 H01L27/12
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