发明名称 |
Method for pulling single crystal |
摘要 |
A method capable of securely pulling up a heavy single crystal is described. Using an apparatus comprising a crucible for storing a molten material for a single crystal; a heater for heating the molten material; means for pulling up the single crystal to grow by bringing a seed crystal in contact with the surface of the molten material in the crucible; and a flow-regulating member surrounding the single crystal at the growth area for shielding the heat of radiation and for regulating inert gas flow, the method comprises the following steps of: setting the distance between the lower end of the flow-regulating member and the surface of the molten material to be a first distance D1 when the seed crystal comes into contact with the surface of the molten material in said crucible; forming the single crystal at the neck portion; thereafter setting the distance between the lower end of the flow-regulating member and the surface of the molten material to be a second distance D2 where D1 (mm)>D2 (mm); and forming the single crystal at the shoulder portion and subsequently forming the single crystal at the body portion. A dislocation-free single crystal having a heavy weight can be produced with a high crystal quality, and the method is applicable to various operation modes at which the apparatus is operated under various conditions of crystal growth.
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申请公布号 |
US2003047131(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
US20020230987 |
申请日期 |
2002.08.30 |
申请人 |
MORITA HIROSHI;WATANABE HIDEKI |
发明人 |
MORITA HIROSHI;WATANABE HIDEKI |
分类号 |
C30B15/00;C30B15/14;C30B29/06;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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