发明名称 GRINDING APPARATUS AND THICKNESS MANAGING METHOD FOR WAFER
摘要 PROBLEM TO BE SOLVED: To improve machining efficiency, save labor power, maintain high dimensional control, and achieve high precision machining in wafer grinding operation. SOLUTION: This apparatus is provided with rotary grinding wheels 53, 54 for grinding a surface of a wafer W1 to be ground and a gauge for measuring thicknesses of the wafer W1 to be ground and a master wafer W2. For example, the thickness of the master wafer W2 is employed as a reference value of zero under the circumstance. Based on the reference value, the thickness of the wafer W1 to be ground measured by the same gauge is compared so as to calculate a difference value from the reference value. According to the difference value, correction is carried out so that the machining thickness of wafer W1 to be ground is accurately maintained. Even when only one master wafer is employed, a shift value may be obtained with respect to another target value, and thickness control is carried out as if a master is set for each thickness.
申请公布号 JP2003071713(A) 申请公布日期 2003.03.12
申请号 JP20010259189 申请日期 2001.08.29
申请人 NIPPEI TOYAMA CORP 发明人 KOBAYASHI SHIGEO
分类号 B24B49/06;B24B7/17;(IPC1-7):B24B49/06 主分类号 B24B49/06
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