MEMORY CELL

摘要

The invention relates to computer engineering and can be used for various computer memory devices and for developing video-audio apparatus of new generation, systems of associative memories and synapses (an element of a electric line provided with a programmable electric resistance) for neural networks of neurocomputers. The inventive memory cell makes it possible to preserve several data bits and has a high speed. Said memory cell comprises two aluminium solid electrodes (1 and 2) and a multilayer functional area disposed therebetween and consisting of an active layer (3), a barrier layer (4) and a passive layer (5).