| 摘要 |
A lower mirror is formed on an n-type GaAs substrate. Next, an ion implanted region serving as a current confining region is formed through shallow ion implantation. Then, a SiO2 film mask is formed, and a multilayer structure including an active region and an upper mirror is selectively grown on an area not covered with the SiO2 film mask. In this manner, a surface emitting semiconductor laser with a low resistance and a low threshold current is obtained by using ion implantation and selective oxidation through a simplified fabrication process.
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