| 摘要 |
<p>A method of fabricating a gate electrode for a semiconductorc comprising the steps of: providing a substrate; providing on the substrate a layer of a first material of thickness tp, the first material being selected from the group consisting of Si, Si l-x-Gex alloy, Ge and mixtures thereof and a layer of meta1 of thickness tm; and annea1ing the 1ayers, such that substantial1y aIl of the first materia1 and the meta1 are consumed during reaction with one another. [Figure 1]</p> |
