| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that arises when growing a thin film of group II-VI compound on group III-V compound, where a compound different from an objective compound is produced by reacting group III element and group VI on the boundary surface, and defects of this compound greatly damages quality of the crystal of group II-VI compound thin film. SOLUTION: A specimen obtained by covering a group III-V compound 1 with an amorphous thin film 2 of a proper thickness of group II element is heated so as to evaporate the amorphous film when the thickness of the elements reaches a monomolecular layer 3, the group II-VI compound thin film is made to grow. By this method, the growth of the high quality group II-VI compound thin film is performed. A method of measuring the most preferable thickness of amorphous film is provided in growth process at a real time by using a reflection high speed electron beam diffraction meter.
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