| 摘要 |
PURPOSE: A word line control circuit of an SRAM is provided to reduce the power consumption by controlling word lines in a write operation. CONSTITUTION: A word line control circuit of an SRAM includes a first voltage detection circuit(21), a second voltage detection circuit(22), and a logic operation circuit(23). The first voltage detection circuit(21) is used for detecting a variation of voltages of data bit line(DB). The second voltage detection circuit(22) is used for detecting a variation of voltages of data bit lines(inverse DB). The logic operation circuit(23) receives an output of the first voltage detection circuit(21) and an output of the second voltage detection circuit(22) and generates a word line control signal.
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