EPITAXIAL WAFER AND METHOD OF MANUFACTURING IT

摘要

PROBLEM TO BE SOLVED: To provide a III-V compound semiconductor epitaxial wafer having few slip lines and cross hatches. SOLUTION: This method of manufacturing an epitaxial wafer is such that, when a III-V compound semiconductor layer is made to grow by epitaxial growth on a GaAs or InP compound semiconductor substrate, a temperature rising rate is reduced at least one time during a substrate temperature rising period before the epitaxial growth is started.