| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin valve type thin film element exhibiting excellent heat resistance and reliability and having a small asymmetry in which the direction of varying magnetization of a free magnetic layer can be controlled by providing a bias conductive layer and applying a current thereto. SOLUTION: The spin valve type thin film element comprises an antiferromagnetic layer 2, a fixed magnetic layer 3, a free magnetic layer 5 formed on the fixed magnetic layer 3 through a nonmagnetic conductive layer 4, a hard bias layer, a conductive layer 8 for supplying a detection current i1 to the fixed magnetic layer 3, the nonmagnetic conductive layer 4 and the free magnetic layer 5, a bias conductive layer B11 for controlling the direction of varying magnetization Hf1 of the free magnetic layer 5, and means 15 for supplying a current to the conductive layer 8 and the bias conductive layer B11, all of which are formed on a substrate.
|
