| 摘要 |
A process for making a semiconductor device, comprises a first step of embedding a conductive material in a via-hole formed in a first interlayer dielectric film to form a conductive plug connected to a lower layer wiring line, a second step of forming an upper layer wiring groove in a second interlayer dielectric film formed on the conductive plug such that a target area of the conductive plug is exposed in the upper layer wiring groove, a third step of forming a first barrier layer on an entire surface of the second interlayer dielectric film including the upper layer wiring groove, and a fourth step of embedding a wiring material in the upper layer wiring groove to form an upper layer wiring line. The process further comprises a fifth step of selectively removing the first barrier layer formed only on the conductive plug prior to the fourth step.
|
