| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a hetero junction field effect transistor that has good noise performance and a high gate breakdown voltage. SOLUTION: This hetero junction field effect transistor, which comprises a channel layer 3 consisting of GaInP, which has a lower potential energy in a conduction band than that of a buffer layer 2 and is doped with a donor impurity, via the buffer layer 2 on a GaAs semiconductor substrate, a Schottky layer 4 consisting of either GaInP or (AlGa)0.5 In0.5 P, which has a higher potential energy in the conduction band than that of the channel layer 3, a gate electrode that comes in contact with the Schottky layer 4, and a source electrode supplying carriers into the channel layer and a drain electrode, is characterized in that the channel layer 3 is formed with Gaa In1-a P (0<=a<0.52) and the Schottky layer is formed with either Gab In1-b P (a<b<=1) or (Alc Ga1-c )0.5 In0.5 P (0<=c<=0.4).</p> |
