| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an insulation film of a low dielectric constant and high mechanical strength, and to provide a semiconductor device capable of reducing both of a capacity between wiring layers and a capacity between wirings, even if the semiconductor is refined and integrated highly. SOLUTION: A first porus structure domain, obtained by arraying columnar holes periodically and a second porus structure domain obtained by arraying layered holes periodically in the vertical direction on the surface of a substrate are arrayed repeatedly in an inorganic insulation film.</p> |
