| 摘要 |
<p>This invention provides a semiconductor memory device and a corresponding method of operation. The semiconductor memory device comprises a semiconductor substrate (1) having a first conductivity (p); a plurality of gate structures (CG1, FG1; ... ; CGn, FGn) for storing charge in a non-volatile manner regularly arranged in above the surface of the semiconductor substrate (1) and electrically isolated therefrom; a plurality of wordlines (WL1-WL5), each of said gate structures (CG1, FG1; ...; CGn, FGn) being connected to one of said wordlines (WL1-WL5) and a group of said gate structures (CG1, FG1, ...; CGn, FGn) being connected to a common word</p> |
