INTERDIGITATED MULTILAYER CAPACITOR STRUCTURE FOR DEEP-SUB-MICRON CMOS,申请号EP20010925513-传众专利搜索

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发明名称	INTERDIGITATED MULTILAYER CAPACITOR STRUCTURE FOR DEEP-SUB-MICRON CMOS
摘要
申请公布号	EP1275154(A2)	申请公布日期	2003.01.15
申请号	EP20010925513	申请日期	2001.03.29
申请人	KONINKLIJKE PHILIPS ELECTRONICS N.V.	发明人	SOWLATI, TIRDAD;VATHULYA, VICKRAM
分类号	H01L27/04;H01L21/02;H01L21/822;H01L21/8234;H01L27/06;H01L27/08;(IPC1-7):H01L27/08	主分类号	H01L27/04
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