| 摘要 |
PURPOSE: A method for forming a multilayer metal wiring in a semiconductor device is provided to be capable of reducing contact resistance between metal lines, improving the planarization of an interlayer dielectric and simplifying the processes. CONSTITUTION: After forming a lower metal wiring(11) on a substrate(10), a photoresist pattern(13) having a hole(19) is formed on the lower metal wiring. After hardening the photoresist pattern(13) by baking, a contact(17) is formed by filling a metal film into the hole. After removing the photoresist pattern, an interlayer dielectric(12) is formed on the exposed lower metal wiring(11). Then, an upper metal wiring(18) is formed on the resultant structure.
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