| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve the quality of the semiconductor device by preventing the generation of a divot on a silicon oxide layer. CONSTITUTION: A silicon oxide layer is formed on a silicon substrate(10). A silicon nitride layer is stacked on the silicon oxide layer. A trench(6) is formed by etching the silicon nitride layer, the silicon oxide layer, and the silicon substrate(10). A silicon oxide layer(12) is stacked on the trench(6) and the silicon nitride layer. A nitrogen ion implantation layer is formed by implanting nitrogen ions into the silicon oxide layer(12). A thermal process for the nitrogen ion implantation layer is performed. A silicon oxynitride layer is formed within the silicon oxide layer(12) by performing the thermal process for the silicon oxide layer(12). A MOS transistor is fabricated by forming a pattern of a gate oxide layer(14), a gate electrode(16), and the second conductive type source/drain region(S,D) on an active region of the silicon substrate(10). A silicide layer(18) is formed on the second conductive type source/drain region(S,D).
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