| 摘要 |
A method of transferring photomask patterns of a single photomask to a semiconductor wafer. The photomask patterns include at least a first pattern and a second pattern. The semiconductor wafer includes at least a photoresist layer positioned on the surface of the semiconductor wafer. A first exposure process is performed through the first pattern and the second pattern of the photomask to expose a first region and a second region in the photoresist layer, respectively. A second exposure process is then performed through the first pattern and the second pattern of the photomask in order to expose the second region and a third region in the photoresist layer, respectively. The combination of the first pattern and the second pattern in the second region in the photoresist layer is a latent pattern. Lastly, a development process is performed in order to transfer the latent pattern to the photoresist layer.
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