发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which a command by which read-out, write-in, and erasure can be performed by only a specific user can be set. SOLUTION: In a non-volatile semiconductor memory in which access is controlled conforming to a command externally inputted, the device is provided with a storage means 9 storing a user command having a data value which can be previously defined, a comparing means 1 a command externally inputted with a user command code stored in the storage means, and an access control section 2 outputting a control signal required for accessing a memory region only when a compared result coincides by the comparing means.</p>
申请公布号 JP2002367379(A) 申请公布日期 2002.12.20
申请号 JP20010168885 申请日期 2001.06.04
申请人 SHARP CORP 发明人 MINAMIGUCHI TETSUYA;TAKADA SHIGEKAZU
分类号 G06F12/14;G06F21/02;G11C16/02;G11C16/06;(IPC1-7):G11C16/02 主分类号 G06F12/14
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