| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device that makes stress compensation, so that the accumulated strains of the compressive strain held by a transformed layer and the compressive strain held by an MQW layer formed on the transformed layer through a first guide layer may not exceed the critical amount of strain of a semiconductor crystal, and to provide a method of manufacturing the device. SOLUTION: The distributed feedback semiconductor laser 101 comprises a diffraction grating 3 formed on the surface of an n-type InP substrate 2, the InAsP transformed layer 4 formed on the surface of the grating 3, and an n-type InGaAsP first guide layer 102 formed on the layer 4 and having a stretching strain. The laser 101 also comprises an InGaAsP multiple well active layer 6 formed on the layer 102 and having a compressive strain, a p-type InGaAsP second guide layer 7 formed on the layer 6, and a p-type InP clad layer 8 formed on the layer 7. In addition, the laser 101 also comprises an InGaAsP cap layer 9 formed on the layer 8, an antireflection coating 10 formed on the front end face of the laser 101, and a reflection coating 11 formed on the rear end face of the laser 101.
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