| 摘要 |
A semiconductor light emitting device includes a cladding layer having a first conductive type, an active layer, and a semiconductor layer including at least a cladding layer and having a second conductive type reversed to the first conductive type, which layers are sequentially stacked on a substrate; wherein a ridge is formed on part of an upper portion of the semiconductor layer; each of the cladding layer having the first conductive type, the active layer, and the semiconductor layer having the second conductive type is made from a nitride based group III-V compound semiconductor; and the width of the ridge is in a range of 1.9 to 2.6 mum. The semiconductor light emitting device is stably operable with an output of about 30 mW by setting a threshold current to 100 mA or less and also setting a horizontal angle to 6° or more.
|
