| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-receiving element having wavelength pass-band characteristics in which a high sensitivity rate is obtained, even in a thin filter layer, and the depth of impurity diffusion in a light-receiving part is equivalent to that of conventional pin photodiodes. SOLUTION: A filter layer 3 and a buffer layer 4 are successively laminated on a first main face 2 of a semiconductor substrate 1, and island-shaped light- absorbing layer 5 and window layer 6 are laminated on the buffer layer 4. A diffusion region 7, where p-type impurity is diffused, is formed in the window layer 6. An n-side electrode 8 is formed on the buffer layer 4, and a p-side electrode 9 is formed on the diffusion area 7. Also, a light incident part 10 is formed on the buffer layer 4, where the light-absorbing layer 5 is not formed.
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