发明名称 |
SUBSTRATE HEAT TREATING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for quickly cooling a substrate at a high temperature side. SOLUTION: A shutter plate 26 is disposed between a light incident window 16 of a heat treating furnace 10 and a lamp 20a of a lamp house 20, and the plate 26 is held at a waiting position in heat treatment and moved from the waiting position to a working position at the same time as or just after the feed stop of the lamp after finishing the heat treatment, thereby shutting off remaining heat of the lamp from radiating a wafer W in the heat treating furnace.
|
申请公布号 |
JP2002324764(A) |
申请公布日期 |
2002.11.08 |
申请号 |
JP20010126272 |
申请日期 |
2001.04.24 |
申请人 |
DAINIPPON SCREEN MFG CO LTD |
发明人 |
SASAKI KIYOHIRO;KUSUDA TATSUFUMI;TAKAHASHI MITSUKAZU |
分类号 |
H01L21/205;H01L21/26;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|