| 摘要 |
<p>A method is provided, the method comprising forming a buffer layer (440) above a structure layer (420), and forming a dielectric layer (450) above the buffer layer (440). The method also comprises patterning the dielectric layer (450) to form a salicide block (600) above a portion of the structure layer (420) protecting the portion from a subsequent salicidation. A device is also provided, the device comprising a buffer layer (440) above a structure layer (420) and a dielectric layer (450) above the buffer layer (440). The dielectric layer (450) is patterned to form a salicide block above a portion of the structure layer ( 420) to protect the portion from a subsequent salicidation.</p> |
