| 摘要 |
PROBLEM TO BE SOLVED: To enhance the conduction efficiency of heat generated at a heater 45 to the upper part of a semiconductor substrate 1 (to the front side of the substrate 1), in a semiconductor device where a highly voltage-resistant MOS transistor and the heater 45 to be switched by the highly voltage-resistant MOS transistor are formed to the semiconductor substrate 1 in addition to active devices such as MOS transistors for forming a logic circuit. SOLUTION: The heater 45 is formed by using a first insulating layer (heater undercoat film) 44 formed of, e.g. SiO2 a base board. A side of the heater is covered with an insulating layer 46 of the same material as the material of the first insulating layer, and the upper side is covered with a second insulating layer 42 formed of, e.g. Si3 N4 having a higher thermal conductivity than a thermal conductivity of the first insulating layer. Since the upper side of the heater 45 is formed of the insulating material higher in the thermal conductivity than the material of the base board side and the side part, the heat generated from the heater 45 can be conducted more effectively to the upper side than to the lower side and the side part.
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