| 摘要 |
The method involves iteratively removing material from at least one primary surface, measuring the thickness (d1) before and/or after removing material and determining how much material to remove from the wafer (1) and/or subsequent wafers from the measurement value. The weight of the wafer is determined to establish its thickness and the thickness is computed based on the measured weight. Independent claims are also included for the following: an arrangement for reducing thickness of thin plates, especially semiconducting wafers. |
