HIGH FREQUENCY SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve a problem that a parasitic capacitance must be taken into account in high frequency design because parasitic capacitance exists in an inductance element formed of a line conductor on a ground plate while sandwiching an interlayer insulating film. SOLUTION: Since parasitic capacitance due to a dielectric interposed between an inductance element and the ground potential can be eliminated by removing a ground plate directly under the inductance element and providing a gap, a high frequency semiconductor device having good characteristics can be obtained.